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DPH 30 IS 600 HI
ns
HiPerDynFRED2
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
IFSM
IR
A
V
450
IFAV
A
VF
2.48
RthJC
0.55 K/W
VR
=
600
1
3
min.
30
t = 10 ms
(50 Hz), sine
Applications:
VRRM
V
600
V°C=
25
1
μA
TVJ
TVJ
=mA150
0.2
°C
Package:
Part number
VR
=
600
TVJ
=°C25
IF
=A30
V
TC
=
140°C
rectangular 0.5d =
Ptot
285 W
TC
=
25
°C
TVJ
175 °C
-55
VRRM
=
IFAV
=
600
V
30
A
TVJ
=
45°C
DPH 30 IS 600 HI
V
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
3.02
TVJ
=25
°C
CJ
junction capacitance
V = V; TR
400 pFf = 1 MHz = °CVJ
25
VF0
V
1.10
TVJ
=
175°C
rF
12.6
m?
V
1.89
TVJ
=°C150
IF
=A30
V
2.45
IF
=A60
IF
=A60
threshold voltage
slope resistance
for power loss calculation only
Backside: isolated
3A
TVJ
=°C25
reverse recovery time
A
8
35
65
ns
trr
=
35 ns
●
Housing:
ISOPLUS247
High Performance Dynamic Fast Recovery Diode
Extreme Low Loss and Soft Recovery
Single Diode
●rIndustry standard outline
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
IRM
max. reverse recovery current
IF
=A;30
VR
=V400
T=VJ
125°C
-diF/dt
=A/μs200
trr
TVJ
=°C25
T=VJ
125°C
30
thermal resistance junction to case
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
average forward current
IXYS reserves the right to change limits, conditions and dimensions.
?
2010 IXYS all rights reserved
20100126a
Data according to IEC 60747and per diode unless otherwise specified
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